Gallium acetylacetonate

Gallium acetylacetonate
Names
	IUPAC name (Z)-4-bis[(Z)-1-methyl-3-oxobut-1-enoxy]gallanyloxypent-3-en-2-one
	Other names Gallium acetylacetonate
Identifiers
CAS Number	14405-43-7;
ECHA InfoCard	100.034.873
PubChem CID	16717626;
Properties
Chemical formula	GaC15H21O6
Molar mass	367.05 g/mol
Appearance	White solid
Density	1.42 g/cm3
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Gallium acetylacetonate, also referred to as Ga(acac)₃, is a coordination complex with formula Ga(C₅H₇O₂)₃. This gallium complex with three acetylacetonate ligands is used in research. The molecule has D₃ symmetry, being isomorphous with other octahedral tris(acetylacetonate)s.^[1]

Uses

Gallium oxide thin films can be produced by atomic layer epitaxy (ALE) by combining gallium acetylacetonate with either water or ozone as the precursor.^[2] Ga(acac)₃ can also be used for low temperature growth of high purity gallium nitride nano-wires and nano-needles.^[3]^[4]

References

^ Dymock, K.; Palenik, G. J. (1974). "Tris(acetylacetonato)gallium(III)". Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry. 30 (5): 1364–1366. Bibcode:1974AcCrB..30.1364D. doi:10.1107/S0567740874004833.
^ Nieminen, Minna; Niinistö, Lauri; Rauhala, Eero (1996). "Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy". J. Mater. Chem. 6: 27–31. doi:10.1039/JM9960600027.
^ Chang, Ko-Wei; Wu, Jih-Jen (2002). "Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires". The Journal of Physical Chemistry B. 106 (32): 7796–7799. doi:10.1021/jp026152t.
^ Chang, K.-W.; Wu, J.-J. (2003). "Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor". Applied Physics A: Materials Science & Processing. 77 (6): 769–774. Bibcode:2003ApPhA..77..769C. doi:10.1007/s00339-003-2229-y.

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[1] Dymock, K.; Palenik, G. J. (1974). "Tris(acetylacetonato)gallium(III)". Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry. 30 (5): 1364–1366. Bibcode:1974AcCrB..30.1364D. doi:10.1107/S0567740874004833.

[ALE-2] Nieminen, Minna; Niinistö, Lauri; Rauhala, Eero (1996). "Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy". J. Mater. Chem. 6: 27–31. doi:10.1039/JM9960600027.

[GaN-3] Chang, Ko-Wei; Wu, Jih-Jen (2002). "Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires". The Journal of Physical Chemistry B. 106 (32): 7796–7799. doi:10.1021/jp026152t.

[VLS-4] Chang, K.-W.; Wu, J.-J. (2003). "Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor". Applied Physics A: Materials Science & Processing. 77 (6): 769–774. Bibcode:2003ApPhA..77..769C. doi:10.1007/s00339-003-2229-y.

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