Talk:Silicon on sapphire

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Copyright problem removed

One or more portions of this article duplicated other source(s). The material was copied from this URL: http://www.ece.jhu.edu/Seminars/Culurciello%20Defense.htm. The material was copied on November 12 2007, here, and subsequently revised but insufficiently to address copyright concerns. Infringing material has been rewritten or removed and must not be restored, unless it is duly released under a license compatible with GFDL. (For more information, please see "using copyrighted works from others", if you are not the copyright holder of this material, or "donating copyrighted materials" if you are.) For legal reasons, we cannot accept copyrighted text or images borrowed from other web sites or printed material; such additions will be deleted. Contributors may use external websites as a source of information, but not as a source of sentences. Accordingly, the material may be rewritten, but only if it does not infringe on the copyright of the original or plagiarize from that source. Wikipedia takes copyright violations very seriously and persistent violators will be blocked from editing. --Moonriddengirl ^(talk) 14:19, 27 June 2008 (UTC)[reply]

New copyvio problem

A large portion of the article and associated figures are takes straight from [1] without credit. a13ean (talk) 17:39, 1 March 2012 (UTC)[reply]

Copyright problem removed

Prior content in this article duplicated one or more previously published sources. The material was copied from: http://www.psemi.com/articles/History_SOS_73-0020-02.pdf. Infringing material has been rewritten or removed and must not be restored, unless it is duly released under a compatible license. (For more information, please see "using copyrighted works from others" if you are not the copyright holder of this material, or "donating copyrighted materials" if you are.) For legal reasons, we cannot accept copyrighted text or images borrowed from other web sites or published material; such additions will be deleted. Contributors may use copyrighted publications as a source of information, but not as a source of sentences or phrases. Accordingly, the material may be rewritten, but only if it does not infringe on the copyright of the original or plagiarize from that source. Please see our guideline on non-free text for how to properly implement limited quotations of copyrighted text. Wikipedia takes copyright violations very seriously, and persistent violators will be blocked from editing. While we appreciate contributions, we must require all contributors to understand and comply with these policies. Thank you. Dpmuk (talk) 16:44, 12 March 2012 (UTC)[reply]

Problem with References

Many of the sources are from the Yale e-lab website that is now hosted by Purdue. The references in this article must be updated as the links do not work. "July 2011: Eugenio Culurciello is now an Associate Professor at Purdue University Weldon School of Biomedical Engineering. e-Lab has now moved to Purdue!"
I will try to come back and update sources. I am engineering student, so I have access to information on the silicon on sapphire process. Bobbie112 (talk) 01:53, 11 December 2013 (UTC)[reply]

HP handheld calculators used bulk CMOS, not SOS

HP used SOS in various desktop computers and peripheral (9800 series), but not in handheld calculators. HP used bulk CMOS in the 25C, 19C, 29C, and 41C family. The Voyager series (10C, 11C, 12C, 15C, 16C) initially used the same bulk CMOS "Nut" CPU as the 41C, along with the bulk CMOS "R2D2" (RAM/ROM/Display Driver) chip. Over the years there were a number of redesigns, which have all used bulk CMOS, with recent versions of the 12C using commercially available Atmel ARM.microcontrollers rather than HP custom. https://www.hpmuseum.org/journals/hp41/41bc.htm Brouhaha (talk) 07:33, 12 March 2020 (UTC)[reply]

Radiation Resistance

Need to understand how standard NMOS and TTL were built. P-type "islands"(wells) on N-type Silicon on top of N+ Ground attachment via Gold-Silicon alloy. This forms a P-I-N diode with photoelectric properties. These "stray currents" are minimized by having a thinner lightly doped N-layer. 2600:100F:A020:F420:E8D3:194F:55B:4A2D (talk) 05:02, 2 July 2024 (UTC)[reply]