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  • Comment: Draft's lead section is laden with jargon and unintelligible to layperson readers. Needs to be rewritten before resubmitting. ~Liancetalk 16:27, 16 September 2024 (UTC)

Lateral Epitaxial Overgrowth and Pendeo Epitaxy

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Lateral Epitaxial Overgrowth (LEO) along with Pendeo epitaxy (PE) are Selective Area Growth (SAG) Techniques, developed in the late 1990s and early 2000s for epitaxial growth of wide bandgap materials: gallium nitride (GaN) on silicon carbide (SiC) substrate.[1] [2] [3] [4] [2] [5] [6], GaN on sapphire (Al2O3) substrate [7] [8], and GaN on silicon (Si) substrate[9] [10]. Epitaxial GaN is relevant to a semiconductor device technology important in chip manufacturing for development of high-power, high frequency, high temperature electronic devices[11] [12] [13] [14]. LEO and PE are technologies that are not limited to the wide bandgp GaN materials. Conventional epitaxial growth techniques of GaN on SiC, sapphire and Si are known to produce high density of structural defects[15] [16] [17], mainly edge and screw dislocations and stacking faults, in the order of 109-1010 cm-2. PE and LEO, the latter also referred to epitaxial lateral overgrowth (ELO), are known to enable two to four orders of magnitude lower density of dislocations. Having device layers of low defect density enables improved device characteristics and performance[18] [19].

Fig.1  A schematic diagram of the lateral epitaxial overgrowth (LEO) of GaN.

Lateral Epitaxial Overgrowth

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Initially PE was developed as an alternative technology and inverted approach to Lateral Epitaxial Overgrowth (LEO) of GaN on SiC substrate[3] [4]. LEO involves growing a seed GaN layer of the material on the substrate, then etching a patterned mask on the surface of the seed layer, leaving some seed windows exposed that act as crystallographic template for the subsequent growth of the GaN layer (Figure 1). The new LEO film grows simultaneously from the GaN windows both vertically and at the same time extends laterally over the mask, forming wings of much lower density of structural defects (mostly treading dislocations). The wings can merge together to form a continuous GaN film, or remain separated by seams[9]. Notably LEO process drastically reduces the defects in the laterally grown areas by filtering them out at the mask interface. LEO can be performed from the liquid phase or the vapor phase, depending on the material and the growth conditions via epitaxial growth techniques such as MOCVD, HVPE.

Fig.2  A schematic diagram of the pendeo epitaxial (PE) growth of GaN.

Pendeo Epitaxy

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Pendeo epitaxy of GaN involves growing a continuous GaN film, commonly with high density of dislocations, as a seed layer on a substrate (SiC, sapphire or Si), then etching away portions from the GaN film (seed layer) thus leaving  GaN seed stripes or columns. The subsequent PE layer grows simultaneously from the tops and the side walls of the GaN stripes or columns (Figure 2). Thus, the tops and the side walls of these columns act as homoepitaxial seed layers for the subsequent vertical and lateral growth of continuous PE GaN layers enabling two to four orders of magnitude lower density of dislocations. The film grows laterally from the side walls of the columns and extends horizontally over the substrate without touching the initial seed layer, forming wings of low crystallographic defect density[5]. The material grown laterally between the columns doesn’t touch the underlying seed film thus leaving it suspended without contact with the initial seed layer. The wings can merge to form a continuous film or remain separated by seams. As LEO, Pendeo epitaxy reduces the defects in the film thus avoiding the direct contact with the substrate, eliminating the lattice mismatch and the thermal mismatch stress. Pendeo epitaxy is mainly performed from the vapor phase and initially was mostly used for growing gallium nitride (GaN) structures.

In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU. Numerous groups from US, Japan and Europe participated in the early development of these technologies as well. The PE and LEO is not limited to the development of low defect density wide bandgap GaN layers, important for the microelectronics industry, but also for many other epitaxial materials systems (Si, SiC, diamond etc.). Modeling of the LEO and PE processes reveals improved stress/strain characteristics and the concomitant improved device characteristics[20]. The strong microelectronics relevance of PE and PEO technologies to enable low density of dislocations in the layers was documented in numerous inventions and patents[21] [22] [23] [24] [25] [26] [27]

  1. ^ Zheleva, Tsvetanka S.; Nam, Ok-Hyun; Bremser, Michael D.; Davis, Robert F. (1997-10-27). "Dislocation density reduction via lateral epitaxy in selectively grown GaN structures". Applied Physics Letters. 71 (17): 2472–2474. Bibcode:1997ApPhL..71.2472Z. doi:10.1063/1.120091. ISSN 0003-6951.
  2. ^ a b Nam, Ok-Hyun; Bremser, Michael D.; Zheleva, Tsvetanka S.; Davis, Robert F. (1997-11-03). "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy". Applied Physics Letters. 71 (18): 2638–2640. Bibcode:1997ApPhL..71.2638N. doi:10.1063/1.120164. ISSN 0003-6951.
  3. ^ a b Zheleva, Tsvetanka S.; Nam, Ok-Hyun; Ashmawi, Waeil M.; Griffin, Jason D.; Davis, Robert F. (2001-02-01). "Lateral epitaxy and dislocation density reduction in selectively grown GaN structures". Journal of Crystal Growth. 222 (4): 706–718. Bibcode:2001JCrGr.222..706Z. doi:10.1016/S0022-0248(00)00832-0. ISSN 0022-0248.
  4. ^ a b Zheleva, Tsvetanka S.; Smith, Scott A.; Thomson, Darren B.; Linthicum, Kevin J.; Rajagopal, Pradeep; Davis, Robert F. (April 1999). "Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films". Journal of Electronic Materials. 28 (4): L5–L8. Bibcode:1999JEMat..28L...5Z. doi:10.1007/s11664-999-0239-z. ISSN 0361-5235.
  5. ^ a b Davis, Robert F.; Gehrke, T; Linthicum, K.J.; Rajagopal, P; Roskowski, A.M.; Zheleva, T.; Preble, Edward A.; Zorman, C.A.; Mehregany, M.; Schwarz, U.; Schuck, J.; Grober, R. (2001). "Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates". MRS Internet Journal of Nitride Semiconductor Research. 6. doi:10.1557/S1092578300000260. ISSN 1092-5783.
  6. ^ Zheleva, Tsvetanka S.; Smith, Scott A.; Thomson, Darren B.; Gehrke, Thomas; Linthicum, Kevin J.; Rajagopal, Pradeep; Carlson, Eric; Ashmawi, Waeil M.; Davis, Robert F. (1999-12-01). "Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures". MRS Internet Journal of Nitride Semiconductor Research. 4 (1): 275–280. doi:10.1557/S1092578300002581. ISSN 1092-5783.
  7. ^ Chichibu, S. F.; Marchand, H.; Minsky, M. S.; Keller, S.; Fini, P. T.; Ibbetson, J. P.; Fleischer, S. B.; Speck, J. S.; Bowers, J. E.; Hu, E.; Mishra, U. K.; DenBaars, S. P.; Deguchi, T.; Sota, T.; Nakamura, S. (1999-03-08). "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth". Applied Physics Letters. 74 (10): 1460–1462. Bibcode:1999ApPhL..74.1460C. doi:10.1063/1.123581. ISSN 0003-6951.
  8. ^ Lahrèche, H; Vennéguès, P; Beaumont, B; Gibart, P (1999-09-01). "Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth". Journal of Crystal Growth. 205 (3): 245–252. Bibcode:1999JCrGr.205..245L. doi:10.1016/S0022-0248(99)00299-7. ISSN 0022-0248.
  9. ^ a b Davis, Robert F.; Gehrke, T.; Linthicum, K. J.; Zheleva, T. S.; Preble, E. A.; Rajagopal, P.; Zorman, C. A.; Mehregany, M. (2001-05-01). "Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization". Journal of Crystal Growth. Proceedings of the 12th American Conference on Crystal Growth and Epitaxy. 225 (2): 134–140. Bibcode:2001JCrGr.225..134D. doi:10.1016/S0022-0248(01)00836-3. ISSN 0022-0248.
  10. ^ Feltin, Eric; Beaumont, B.; Laügt, M.; de Mierry, P.; Vennéguès, P.; Lahrèche, H.; Leroux, M.; Gibart, P. (2001-11-12). "Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy". Applied Physics Letters. 79 (20): 3230–3232. Bibcode:2001ApPhL..79.3230F. doi:10.1063/1.1415043. ISSN 0003-6951.
  11. ^ Woo, Kelly; Bian, Zhengliang; Noshin, Maliha; Perez Martinez, Rafael; Malakoutian, Mohamadali; Shankar, Bhawani; Chowdhury, Srabanti (2024-04-01). "From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices". Journal of Physics: Materials. 7 (2): 022003. Bibcode:2024JPhM....7b2003W. doi:10.1088/2515-7639/ad218b. ISSN 2515-7639.
  12. ^ La Via, Francesco; Alquier, Daniel; Giannazzo, Filippo; Kimoto, Tsunenobu; Neudeck, Philip; Ou, Haiyan; Roncaglia, Alberto; Saddow, Stephen E.; Tudisco, Salvatore (June 2023). "Emerging SiC Applications beyond Power Electronic Devices". Micromachines. 14 (6): 1200. doi:10.3390/mi14061200. ISSN 2072-666X. PMC 10300968. PMID 37374785.
  13. ^ Pearton, S. J.; Zolper, J. C.; Shul, R. J.; Ren, F. (1999-07-01). "GaN: Processing, defects, and devices". Journal of Applied Physics. 86 (1): 1–78. Bibcode:1999JAP....86....1P. doi:10.1063/1.371145. ISSN 0021-8979.
  14. ^ Kum, Hyun; Lee, Doeon; Kong, Wei; Kim, Hyunseok; Park, Yongmo; Kim, Yunjo; Baek, Yongmin; Bae, Sang-Hoon; Lee, Kyusang; Kim, Jeehwan (October 2019). "Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices". Nature Electronics. 2 (10): 439–450. doi:10.1038/s41928-019-0314-2. ISSN 2520-1131.
  15. ^ Matthews, J. W.; Blakeslee, A. E. (1974-12-01). "Defects in epitaxial multilayers: I. Misfit dislocations". Journal of Crystal Growth. 27: 118–125. doi:10.1016/S0022-0248(74)80055-2. ISSN 0022-0248.
  16. ^ Matthews, J. W.; Blakeslee, A. E. (1975-07-01). "Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks". Journal of Crystal Growth. 29 (3): 273–280. Bibcode:1975JCrGr..29..273M. doi:10.1016/0022-0248(75)90171-2. ISSN 0022-0248.
  17. ^ Matthews, J. W.; Blakeslee, A. E. (1976-02-01). "Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers". Journal of Crystal Growth. 32 (2): 265–273. Bibcode:1976JCrGr..32..265M. doi:10.1016/0022-0248(76)90041-5. ISSN 0022-0248.
  18. ^ Nakamura, Shuji (1998-08-14). "The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes". Science. 281 (5379): 956–961. doi:10.1126/science.281.5379.956. ISSN 0036-8075. PMID 9703504.
  19. ^ Webb, Colin E., ed. (2004). Handbook of laser technology and applications. Bristol: Institute of Physics. ISBN 978-0-7503-0607-2.
  20. ^ Zheleva, Tsvetanka S.; Ashmawi, Waeil M.; Nam, Ok-Hyun; Davis, Robert F. (1999-04-26). "Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures". Applied Physics Letters. 74 (17): 2492–2494. Bibcode:1999ApPhL..74.2492Z. doi:10.1063/1.123017. ISSN 0003-6951.
  21. ^ US 6570192B1, Davis, Robert; Nam, Ok-Hyun; Zheleva, Tsvetanka; Bremser, Michael, "Gallium nitride semiconductor structures including lateral gallium nitride layers", published 2003-05-27 
  22. ^ US 6265289B1, Zheleva, Tsvetanka; Thomson, Darren; Smith, Scott; Linthicum, Kevin; Gehrke, Thomas; Davis, Robert, "Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby", published 2001-07-24 
  23. ^ US 11251272B2, Li, Jizhong; Lochtefeld, Anthony J., "Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication", published 2022-02-15 
  24. ^ US 10374120B2, Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcuberta i; Pinnington, Tom; Olson, Sean, "High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials", published 2019-08-06 
  25. ^ US 8502263B2, Li, Jizhong; Lochtefeld, Anthony J., "Light-emitter-based devices with lattice-mismatched semiconductor structures", published 2013-08-06 
  26. ^ US 7083679B2, Kiyoku, Hiroyuki; Nakamura, Shuji; Kozaki, Tokuya; Iwasa, Naruhito; Chocho, Kazuyuki, "Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device", published 2006-08-01 
  27. ^ US 6818926B2, Koide, Norikatsu; Winner, Karl; Kuehn, Benjamin, "Method for manufacturing gallium nitride compound semiconductor", published 2004-11-16 
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