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http://www.chemistrytimes.com/research/New_gas_sensor_is_tiny_quick.asp

Ibitayo Akinwande

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fellow, ieee for contributions to the development of digital self-aligned gate technology and vacuum microelectronic devices

Akintunde Ibitayo (Tayo) Akinwande is a Nigerian[1] professor in the Electrical Engineering and Computer Science Department of the Massachusetts Institute of Technology[2], Cambridge, MA. Professor Akinwande received his B.Sc. (1978) in Electrical and Electronic Engineering from the University of Ife, Nigeria, (now Obafemi Awolowo University), his M.Sc (1981) and Ph.D. (1986) in Electrical Engineering from Stanford University, Stanford, California.

Professor Akinwande joined Honeywell Inc. in 1986 where he initially conducted research on GaAs Complementary FET technology for very high speed and low power signal processing. He later joined the Si Microstructures group where he conducted research on pressure sensors, accelerometers, thin-film field emission and display devices.

Professor Akinwande joined MIT’s Microsystems Technology Laboratories (MTL) in January 1995 where his research focuses on micro-fabrication and electronic devices with particular emphasis on smart sensors and actuators, intelligent displays, large area electronics (macro-electronics), field emission & field ionization devices, mass spectrometry and electric propulsion.

Prof. Akinwande is a recipient of the 1996 National Science Foundation (NSF) Career Award. He has served a number of technical program committees for various conferences, including the Device Research Conference, the International Electron Devices Meeting, the International Solid-State Circuits Conference, the International Display Research Conference and the International Vacuum Microelectronics Conference. Professor Akinwande holds numerous patents in MEMS, Electronics on Flexible Substrates, Display technologies and has authored more than 100 journal publications. He was a visiting professor at the Cambridge University Engineering Department and an Overseas Fellow of Churchill College in 2002-2003. He is a current member of the IEEE Nanotechnology Council.

Research Interests

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Born in the little town of Offa in Kwara State Government College, Ibadan 2008 Fellow Class of 2008 IEEE[4] He helped established the Nigeria Higher Education Foundation in 2004

Patent

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US Patent no. 6870312 - Organic field emission device[5]


Akintunde Ibitayo (Tayo) Akinwande joined the Department of Electrical Engineering and Computer Science at MIT in January 1995 as an Associate Professor. Prior to arriving at MIT, Professor Akinwande was a Staff Scientist at the Honeywell Technology Center in Bloomington, MN. While at Honeywell, Dr. Akinwande pioneered the development of thin-film-edge Field Emitter Arrays for RF Micro-Triode Power Amplifiers and Flat Panel Displays and demonstrated the feasibility of using the thin-film-edge FEA for these applications. Recent accomplishments include demonstration of very low voltage operation field emission arrays using the smallest gate aperture and radius ever reported and a technique of increasing resolution and brightness of emissive displays. Dr. Akinwande received his B.Sc. in Electrical and Electronics Engineering from the University of Ife, Nigeria, and an MS and Ph.D. in Electrical Engineering from Stanford University.


Ilesanmi Adesida

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Born: c. 1949 Birthplace: Ifon, Ondo State, Nigeria

Gender: Male Race or Ethnicity: Black Occupation: Educator

Nationality: United States Executive summary: Dean, College of Engineering, UIUC 

   Member of the Board of Fluor (2007-)
   American Association for the Advancement of Science
   American Vacuum Society
   IEEE 1999
   Materials Research Society
   Minerals, Metals and Materials Society
   National Academy of Engineering 2006
   Optical Society of America
   Society for Engineering Education
   Naturalized US Citizen 2002

Ilesanmi Adesida (born 1949, Ifon, Ondo State, Nigeria) is a naturalized American[6] physicist of Nigerian descent. He is the Donald Biggar Willett Professor of Engineering[7] and the Dean, College of Engineering, University of Illinois at Urbana;[8] and since 2007, a member of the board of Fluor Corporation.[9][10][11] His field of academic research is nanotechnology with special emphasis on high speed devices used in communications. He has held post as director of the Center for Nanoscale Science and Technology, director of the Micro and Nanotechnology Laboratory, professor of materials science and engineering, professor of electrical and computer engineering, professor of the Beckman Institute of Advanced Science and Technology and research professor of the Coordinated Sciences Laboratory, all at the University of Illinois. Adesida earned his bachelor’s (1974), master’s (1975), and doctoral (1979) degrees in electrical engineering from the University of California, Berkeley.

Research

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Adesida is an expert in the processing of semiconductors and other materials at the nanometer-scale level and in ultra-high-speed heterostructure field-effect transistors—the sort of transistors used in cell-phones, fiber optics communications, deep space communications, and other applications. His contributions have provided insights into the limits of advanced lithography and other nanofabrication techniques.

He and his students continue to work in the areas of nanoelectronics and high-speed optoelectronic devices and circuits. Recent work has focused on the development of devices and circuits in the key materials such as indium phosphide and gallium nitride utilized in high-performance wireless, optical fiber communications, and high temperature applications. He has published over 250 refereed journal papers, over 180 conference papers and presentations, and many book chapters.

Professional organisations and honors

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Adesida is a Fellow of both the Institute of Electrical and Electronics Engineers (IEEE), the American Association for the Advancement of Science (AAAS), the American Vacuum Society, and the Optical Society of America. He is a member of the National Academy of Engineering, the Minerals, Metals and Materials Society, Nigerian Academy of Engineering, the Materials Research Society, and the Society for Engineering Education. In 1996, he won the Best Paper Award at the Micro- and Nano-Engineering Conference. At Illinois, he received the Oakley-Kunde Award for Excellence in Undergraduate Education, and he has been appointed a University Scholar and an Associate Member of the Center for Advanced Study. He is a former president IEEE Electron Device Society.[12] Member, Bohmische Society; EMSA Presidential Student Award; IEEE Electron Device Society Distinguished Lecturer (1997 - 2002), Member, Bohmische Physical Society (1988), IBM Postdoctoral Fellowship (1979-1981)

Education and academic post

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Books

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  • Science and Technology in Africa, ISBN 978-1592211128

Patents

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US Patent 5880482 - Low dark current photodetector[13]

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References

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  1. ^ A Noble Nigerian with Dignified Strides[1]
  2. ^ Akinwande's bio at MIT[2]
  3. ^ Research interest[3]
  4. ^ Fellow Class of 2008 [4]
  5. ^ [5]
  6. ^ Naturalized US Citizen
  7. ^ http://www.ece.illinois.edu/people/chairs/willet-professor-adesida.html
  8. ^ [6]
  9. ^ http://people.forbes.com/profile/ilesanmi-adesida/34163
  10. ^ Fluor Adds Ilesanmi Adesida and Peter Barker to Board of Directors
  11. ^ Corporate Executives and Directors at Fluor
  12. ^ http://www.ieee.org/portal/pages/society/eds/adcom/roster.html
  13. ^ http://www.patentstorm.us/patents/5880482.html


Ilesanmi Adesida
Born1949
Ifon, Ondo State, Nigeria
NationalityAmerican
Alma materUniversity of California, Berkeley
Known forMaterial science
Scientific career
FieldsElectrical engineering
InstitutionsUniversity of Illinois at Urbana
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