Talk:Johnson's figure of merit
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Conditions and examples
[edit]Presumably the 'conditions' includes the temperature; but what else ?
A small table of some examples would be very helpful. - Ge, Si, GaAs, GaN, SiC ? - Rod57 (talk) 09:09, 1 January 2016 (UTC)
Table in section 'Example materials'
[edit]The products of the breakdown field and the saturation velocity do not result in the given values of JFM. Only the value for GaN is calculate right. I could not find a source with correct values, so I suggest to delete the table.
possible sources
[edit]- High- f_MAX High Johnson's Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiN_x Passivation JFM = 6.43 × 1012 V/s
- High Johnson's figure of merit (8.32 THz V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon 8.32 × 1012 V/s
- (AlGaN may be variable Al substitution of Ga)
- [1] Table 1.1-1 (p15) lists JFM (relative to Si) : Si=1, GaAs=7, GaInP=16, 4H-SiC=282, GaN=282. Also tabulates Baliga's and Keyes' figures of merit.
- Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5) lists JFM (relative to Si) : Si=1, GaAs=2.7, SiC=20, InP=0.33, GaN=27.5 (probably more reliable than wu), also shows Vsat and Ebreakdown. - Rod57 (talk) 05:07, 2 January 2016 (UTC)
- Why diamond? gives very different figures (but no refs) :
Si GaAs GaN SiC diamond JFM 1 11 790 410 5800 - Rod57 (talk) 09:46, 6 January 2016 (UTC)