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Srabanti Chowdhury

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Srabanti Chowdhury
Alma materUniversity of California, Santa Barbara
University of Calcutta
AwardsIEEE Fellow
2023 SRC Technical Excellence Award, by Semiconductor Research Corporation
Sloan Research Fellowship
DARPA Young Faculty Award
AFOSR Young Investigator Program Award
National Science Foundation CAREER Award
Scientific career
InstitutionsStanford University
ThesisAlGaN/GaN CAVETs for high power switching application (Dec 2010 PhD. advisor: Prof. Umesh Mishra)
Websiteprofiles.stanford.edu/srabanti-chowdhury Edit this at Wikidata

Srabanti Chowdhury is an Indian American Electrical Engineer who is an associate professor of electrical engineering at Stanford University.[1] She is a senior fellow of the Precourt Institute for Energy. At Stanford she works on ultra-wide and wide-bandgap semiconductors and device engineering for energy-efficient electronic devices. She serves as Director for Science Collaborations at the United States Department of Energy Energy Frontier Research Center ULTRA.

Early life and education

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Chowdhury earned her bachelor's degree in radiophysics and electronics at the University of Calcutta Institute of Radiophysics and Electronics.[2] After earning her undergraduate degree, she worked in the corporate sector in Bangalore.[2] She eventually decided to pursue a doctorate, and moved to the United States.[2] She was a graduate student at the University of California, Santa Barbara, where she worked alongside Umesh Mishra.[3][4] During her doctoral research, she developed vertical gallium nitride (GaN) devices for power conversion.[5] She was the first to realize a current aperture vertical electron transistor, a high voltage vertical power switching device based on GaN.[6] These single crystal GaN devices achieved a record-high breakdown electric field. After earning her doctorate, she joined Transphorm, a company that looked to commercialize GaN devices.[2]

Research and career

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Chowdhury leads the WBG Lab[7] at Stanford University. Chowdhury dedicated her early research to the creation of very low loss transistors for power conversion applications. Building upon her doctoral research, she identified and optimized fabrication processes to create GaN vertical devices. Her fabrication makes use of the interesting polarization characteristics of GaN. Reverse polarization of Aluminum Gallium Nitride/GaN heterostructure blocks current, whilst allowing very high current flow to specific regions. Her work offers hope for high power density, high efficiency electronic devices.[8] Alongside GaN, Chowdhury has investigated diamond for passive electronics.[9]

Chowdhury serves as Director for Science Collaborations at the United States Department of Energy Energy Frontier Research Center ULTRA (Ultra Materials for a Resilient, Smart Electricity Grid).[10]

Awards and honors

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Selected publications

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  • Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van de Walle, C. G.; Bellotti, E.; Chua, C. L. (2018). "Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges". Advanced Electronic Materials. 4 (1): 1600501. doi:10.1002/aelm.201600501. ISSN 2199-160X. S2CID 38628999.
  • Chowdhury, Srabanti; Mishra, Umesh K (2013). "Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure". IEEE Transactions on Electron Devices. 60 (10): 3060–3066. Bibcode:2013ITED...60.3060C. doi:10.1109/ted.2013.2277893. ISSN 0018-9383. S2CID 24307058.
  • Chowdhury, Srabanti; Swenson, Brian L.; Mishra, Umesh K. (2008). "Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer". IEEE Electron Device Letters. 29 (6): 543–545. Bibcode:2008IEDL...29..543C. doi:10.1109/led.2008.922982. ISSN 0741-3106. S2CID 20040366.

References

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  1. ^ Srabanti Chowdhury publications indexed by Google Scholar Edit this at Wikidata
  2. ^ a b c d "Biography". Chowdhury, Srabanti. Retrieved 2022-05-22.
  3. ^ "Srabanti Chowdhury | Srabanti Chowdhury's Research Group". wbglab.stanford.edu. Retrieved 2022-05-22.
  4. ^ "Alumni feature on Dr. Srabanti Chowdhury | News | Solid State Lighting & Energy Electronics Center". ssleec.ucsb.edu. Retrieved 2022-05-22.
  5. ^ Everything Matters | Gallium | Srabanti Chowdhury | Exploratorium, 22 July 2018, retrieved 2022-05-22
  6. ^ Chowdhury, Srabanti; University of California, Santa Barbara; Electrical & Computer Engineering (2010). AlGaN/GaN CAVETs for high power switching application. Santa Barbara, Calif.: University of California, Santa Barbara. ISBN 978-1-124-44575-5. OCLC 759569253.
  7. ^ Chowdhury, Srabanti. "WBG-Lab". WBG-lab. Stanford University. Retrieved 3 July 2022.
  8. ^ a b "NSF Award Search: Award # 1719219 - CAREER: A New GaN-based Unit Cell for Highly Efficient Integrated Power Conversion". www.nsf.gov. Retrieved 2022-05-22.
  9. ^ "EDS Seminar: Srabanti Chowdhury: Energy density and newer functionalities in electronics | Cornell Engineering". www.engineering.cornell.edu. Retrieved 2022-05-22.
  10. ^ "Srabanti Chowdhury | ULTRA". ultracenter.asu.edu. Retrieved 2022-05-22.
  11. ^ "DARPA YFA Class of 2015" (PDF). DARPA. 2015.
  12. ^ "AFOSR awards grants to 57 scientists and engineers through its Young Investigator Research". Wright-Patterson AFB. Retrieved 2022-05-22.
  13. ^ "ISCS Young Scientist Award". Compound Semiconductor Week 2018. Retrieved 2022-05-22.
  14. ^ "Prof. Srabanti Chowdhury Announced as one of the Sloan Research Fellows | ComSenTer". comsenter.engr.ucsb.edu. Retrieved 2022-05-22.
  15. ^ "Srabanti Chowdhury". www.naefrontiers.org. Retrieved 2022-05-22.
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