Gallium antimonide
(Redirected from Gallium(III) antimonide)
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| Names | |
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| IUPAC name
Gallium(III) antimonide
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| Other names
Gallium antimonide
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| Identifiers | |
3D model (JSmol)
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| ChemSpider | |
| ECHA InfoCard | 100.031.859 |
PubChem CID
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CompTox Dashboard (EPA)
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| Properties | |
| GaSb | |
| Molar mass | 191.483 g/mol |
| Density | 5.614 g/cm3 |
| Melting point | 712 °C (1,314 °F; 985 K) |
| insoluble | |
| Band gap | 0.726 eV (300 K) |
| Electron mobility | 3000 cm2/(V*s) (300 K) |
| Thermal conductivity | 0.32 W/(cm*K) (300 K) |
Refractive index (nD)
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3.8 |
| Structure | |
| Sphalerite, cF8 | |
| F-43m, No. 216 | |
| Hazards | |
| NFPA 704 (fire diamond) | |
| Flash point | Non-flammable |
| Related compounds | |
Other anions
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Gallium nitride Gallium phosphide Gallium arsenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm.[1] It has a room temperature direct bandgap of approximately 0.73 eV.[1][2][3]
History
[edit]The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide.[4] The Ga-Sb phase equilibria was investigated in 1955 by Koster[5] and by Greenfield.[6]
Applications
[edit]GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
See also
[edit]References
[edit]- ^ a b Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
- ^ Dutta, P. S., Bhat, H. L., Kumar, V. (1997). "The physics and technology of gallium antimonide: An emerging optoelectronic material". Journal of Applied Physics. 81 (9): 5821–5870. Bibcode:1997JAP....81.5821D. doi:10.1063/1.365356.
- ^ Madelung, O., Rössler, U., Schulz, M., eds. (2002). "Gallium antimonide (GaSb), direct energy gap". Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–5. doi:10.1007/10832182_229. ISBN 978-3-540-42876-3.
- ^ Goldschmidt, Victor Moritz (1926). "Geochemische Verteilungsgesetze der Elemente : 7. Die Gesetze der Krystallochemie". Skrifter Norske Videnskaps-Akademi I Oslo (in German). I Kommission Hos Jacob Dybwad: 29.
- ^ Köster, Werner; Thoma, Berthold (1955-04-01). "Aufbau der Systeme Gallium-Antimon, Gallium-Arsen und Aluminium-Arsen". International Journal of Materials Research. 46 (4): 291–293. Bibcode:1955IJMR...46..291K. doi:10.1515/ijmr-1955-460408. ISSN 2195-8556.
- ^ Greenfield, I. G.; Smith, R. L. (1955). "Gallium-Antimony System". Transactions AIME. 7 (2): 351–353. Bibcode:1955JOM.....7..351G. doi:10.1007/BF03377506. ISSN 1047-4838.
External links
[edit]- properties listed at NSM, Ioffe Institute.
- National Compound Semiconductor Roadmap at the Office of Naval Research