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Threshold_formation_nowatermark.gif (722 × 328 pixels, file size: 267 KB, MIME type: image/gif, looped, 24 frames, 3.6 s)

Summary

Description
English: Formation of channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. OMENwire on www.nanoHUB.org Link: http://nanohub.org/resources/omenwire
Date
Source Own work
Author Saumitra R Mehrotra & Gerhard Klimeck, modified by Zephyris

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inception

26 August 2010

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Date/TimeThumbnailDimensionsUserComment
current16:57, 26 August 2010Thumbnail for version as of 16:57, 26 August 2010722 × 328 (267 KB)Zephyris{{Information |Description={{en|1=Formation of channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. OMENwire on www.nanoHUB.org Link: http://nanohub.o

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