File:Partially etched silicon dioxide via Nomarski DIC.jpg
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Summary
| Description |
English: The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The oxide should have been fully etched in the horizontal area at the center of the image, but in fact was not - because of a defect in processing. The irregular remaining oxide is highlighted by the Nomarski Differential Interference Contrast microscopy (DIC). |
| Date | |
| Source | Own work |
| Author | Richstraka |
The photo was imaged on color Polaroid® print film.
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 21:48, 27 September 2009 | | 2,113 × 1,550 (755 KB) | Richstraka~commonswiki | {{Information |Description={{en|1=The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The oxide should have been fully etched in the horizontal area at the center of the image, but in fact was not - becau |
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