Stochastic defects limit the resolution of EUV. At 36 nm pitch, the defect rate does not drop below a floor level ~1e-9. Unopened trenches at larger pitches become less likely at larger widths, while broken resist lines at dense pitches become more likely at the same time. Stochastic defects apply to contact as well as line patterns. Ref.: P. De Bisschop and E. Hendrickx, Proc. SPIE 10957, 109570E (2019).
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