Cyril BUTTAY - plotted using gnuplot, source file available by email: cyril DOT buttay AT free DOT fr

This plot represents the specific resistance of MOSFETs versus their breakdown voltage. The dots are the values estimated from the datasheets of the following manufacturers: International Rectifier, ST Microelectronics, Infineon. Only the transistors in D2PAK package have been considered, with an estimated 30 mm² die size.

The "ideal" curve is the specific resistance of a single silicon layer that can withstand the given breakdown voltage. Its equation is R_dson=5.93.10^-9.Vbr^2.5, and comes from B. JAYANT BALIGA, "Power semiconductor devices", PWS publishing company, 1996

 

This plot was created with Gnuplot by n.

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set xlabel "Breakdown Voltage (V)" set format y '%3.1s %c'#{/Symbol W}' set format x "%3.0s %cV" set logscale xy

1. output file name

set output "bv_rdson.eps" plot [10:2000][100e-6:10] 5.93e-9*(x**2.5) ls 3 title 'Ideal MOSFET',\ 'mos_data.txt' using 1:($2*0.3) ls 2 with points title 'Commercially available MOSFETs (estimated specific resistance)' }}

gnuplot expects to find the data in a file named 'mos_data.txt'. As mentioned above, the data comes from various manufacturers, but I forgot to write down the corresponding devices reference numbers...

 

This plot was created with Gnuplot by n.

convert -density 300 bv_rdson.eps bv_rdson.png

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