File:Bjt forward active bands.svg
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Summary
[edit]Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. is the conduction band, indicates the quasi-fermi energy levels, is the intrinsic Fermi level of the undoped semiconductor, and is the valence band. This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction.
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 01:52, 23 August 2006 | 740 × 400 (87 KB) | Matt Britt (talk | contribs) | == Summary == Energy band diagram of a simple NPN bipolar junction transistor in forward-active mode showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is |
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