English: Schematic design of a room-temperature photodetector utilizing semimetal bismuth nanowire arrays coupled with graphene. The I(V) between the bulk bismuth base and the drain is linear and the resistance is 90 Ohms.
to share – to copy, distribute and transmit the work
to remix – to adapt the work
Under the following conditions:
attribution – You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
share alike – If you remix, transform, or build upon the material, you must distribute your contributions under the same or compatible license as the original.
Uploaded a work by Tito E. Huber, Tina Brower, Scott. D. Johnson, John H. Belk, and Jeff H. Hunt from [https://arxiv.org/abs/1709.05408 Photocurrent in Bismuth Junctions with Graphene] with UploadWizard