File:Bec111.png
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Summary
| Description | Bend extinction contour down Silicon <111>, taken with 100 keV electrons in a specimen prepared by window-method etching in HF:HNO3. |
| Date | |
| Source | Own work |
| Author | P. Fraundorf |
Licensing
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 15:33, 30 April 2008 | | 920 × 920 (712 KB) | Unitsphere | |
| 22:10, 28 April 2008 |  | 927 × 945 (667 KB) | Unitsphere | {{Information |Description=Bend extinction contour down Silicon <111>, taken with 100 keV electrons in a specimen prepared by window-method etching in HF:HNO3. |Source=self-made |Date=July 1974 |Author= P. Fraundorf |Permission=see below |other_versions= |
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