File:Al photoresist pattern developed via Nomarski DIC.jpg
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Summary
| Description | The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The five pink and blue iregularly-shaped rectangles in the image are areas of photoresist that should have been fully developed and rinsed away (purple) but in fact was not - because of a defect in processing. The height of this photoresist is highlighted by the Nomarski Differential Interference Contrast microscopy (DIC). From knowledge of other geometries of the subject, it can be determined that the purple centers of the iregularly-shaped rectangles are in fact lower than the edges. |
| Date | |
| Source | Own work |
| Author | Richstraka |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 22:10, 27 September 2009 | | 2,124 × 1,620 (536 KB) | Richstraka~commonswiki | {{Information |Description=The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The five pink and blue iregularly-shaped rectangles in the image are areas of photoresist that should have been fully etched |
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